Search results for "high-k dielectric"

showing 4 items of 4 documents

Distribution and generation of traps in SiO2/Al2O3 gate stacks

2007

In this work we combine charge-pumping measurements with positive constant voltage stress to investigate trap generation in SiO2/ Al2O3 n-MOSFET. Trap density has been scanned either in energy or in position based on charge-pumping (CP) measurements performed under different operating conditions in terms of amplitude and frequency of the gate pulse. Our results have revealed that the traps are meanly localized shallow in energy level, deeper in spatial position and they are mostly generated near the Si/SiO2 interface. (C) 2007 Elsevier Ltd. All rights reserved.

interface trapsWork (thermodynamics)Materials sciencecharge pumping (CP)Settore ING-INF/01 - ElettronicaTrap (computing)Stress (mechanics)Position (vector)Electrical and Electronic EngineeringSafety Risk Reliability and QualityBulk trapsbusiness.industryElectrical engineeringCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPulse (physics)AmplitudeDistribution (mathematics)Control and Systems Engineeringenergy distributionAtomic physicsbusinesshigh-k dielectricsEnergy (signal processing)
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Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate

2009

Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.

Materials sciencebusiness.industryTransconductanceTransistorTrappingCondensed Matter PhysicsSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionStress (mechanics)lawElectrodeOptoelectronicsDegradation (geology)High-k dielectrics Hot carrier stress Constant voltage stressElectrical and Electronic EngineeringMetal gatebusinessHot-carrier injection
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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

2019

Abstract The structural and the electronic properties of monolayer graphene made by chemical vapor deposition and transferred on various oxide substrates ( SiO 2 , Al 2 O 3 , and HfO 2 ) are investigated by Raman Spectroscopy and Atomic Force Microscopy in order to highlight the influence of the substrate on the features of p-doping obtained by O 2 thermal treatments. By varing the treatment temperature up to 400 °C, the distribution of the reaction sites of the substrates is evaluated. Their total concentration and the consequent highest doping available is determined and it is shown that this latter is linked to the water affinity of the substrate. Finally, by varing the exposure time to …

inorganic chemicalsMaterials scienceDiffusionOxide02 engineering and technologyChemical vapor depositiondoping010402 general chemistry01 natural sciencesGraphene Thermal doping Substrate effectslaw.inventionsymbols.namesakechemistry.chemical_compoundAdsorptionlawGeneral Materials ScienceGrapheneDopinggraphenetechnology industry and agricultureSubstrate (chemistry)General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesChemical engineeringchemistrysymbols0210 nano-technologyRaman spectroscopyhigh-k dielectrics
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Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors

2022

SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…

ToF-ERDAkylmäfysiikkaantimoniatomic layer depositionoksidittransistorithigh-k dielectriclow temperatureatomikerroskasvatusohutkalvotoxide semiconductor
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